Transport phenomena of minority carriers in quasi neutral regions of heavily doped semiconductors are considered for the case of one-dimensional stationary flow and their study is reduced to a Fredholm integral equation of the second kind, the kernel and the known term of which are built from known functions of the doping arbitrarily distributed in space. The advantage of the method consists, among other things, in having all the coefficients of the differential equations and of the boundary conditions of the problem built in only two, the kernel and the known term of the integral equation. For this reason taking into account phenomena such as bangap narrowing, degeneration of majority carriers and Auger effect does not make the problem more difficult to solve, while its qualitative discussion can be appreciably simplified.
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